HOME > Presentation > DetailMOS構造のバイアス印加下XPS測定(XPS analysis of MOS structure under bias voltage applied between gate and silicon)吉武 道子, 大毛利 健治, 知京 豊裕. 第55回応用物理学関係連合講演会. March 27, 2008-March 30, 2008.NIMS author(s)YOSHITAKE, MichikoCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:09:47 +0900 Updated at: 2017-07-10 20:09:24 +0900