金属ZrB2基板への高品質GaN結晶の成長

金属ZrB2基板への高品質GaN結晶の成長
(Crystal Growth of High-quality GaN on Metal-ZrB2)

Y.Yukawa, T.Nakamura, M.Kosaki, Y.Watanabe, S.Nitta, S.Kamiyama, H.Amano, I.Akasaki, 大谷茂樹, H.Kinoshita, Y.Yukawa, T.Nakamura, M.Kosaki, Y.Watanabe, S.Nitta, S.Kamiyama, H.Amano, I.Akasaki, 大谷茂樹, H.Kinoshita.

28th　international symposium on Compound Semiconductors 2001. 2001-10-01.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-02-18 02:26:10 +0900 Updated at: 2017-07-10 18:19:35 +0900

金属ZrB2基板への高品質GaN結晶の成長(Crystal Growth of High-quality GaN on Metal-ZrB2)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

金属ZrB2基板への高品質GaN結晶の成長
(Crystal Growth of High-quality GaN on Metal-ZrB2)