HOME > Presentation > Detail点接触法によりSi(100)表面に作製されたタングステンドットと一次元量子井戸(Formation of tungsten nanodots and a 1D quantum well on the Si(100) surface by point contact)鷺坂 恵介, 藤田 大介. International Advanced Materials Forum for Young Scientists. February 27, 2006-March 01, 2006.NIMS author(s)SAGISAKA, KeisukeFUJITA, DaisukeFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:36:23 +0900Updated at: 2017-07-10 19:34:49 +0900