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GaAs micro crystal growth on a As-terminated Si Surface by low energy focused lon beam.
(低エネルギー集束イオンビームによるひ素終端Si(001)表面上でのGaAs微結晶の成長)
Maferial Research Soceity Fall Meeting 98. November 30, 1998-December 04, 1998.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 01:36:03 +0900 Updated at: 2017-07-10 17:52:37 +0900