HOME > Presentation > DetailVLS法によるSiナノワイヤの成長方向のシランガス分圧依存性評価(SiH4 Partial Pressure Dependence of Si Nanowire Orientation by VLS Method)北澤 佑記, 堀口 竜麻, 小平 竜太郎, JEVASUWAN Wipakorn, FUKATA Naoki, 原 真二郎. The 80th Autumn Meeting 2019. 2019.NIMS author(s)JEVASUWAN, WipakornFUKATA, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-01-07 03:00:30 +0900Updated at: 2020-01-07 03:00:30 +0900