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VLS法によるSiナノワイヤの成長方向のシランガス分圧依存性評価
(SiH4 Partial Pressure Dependence of Si Nanowire Orientation by VLS Method)

北澤 佑記, 堀口 竜麻, 小平 竜太郎, JEVASUWAN Wipakorn, FUKATA Naoki, 原 真二郎.
The 80th Autumn Meeting 2019. 2019.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2020-01-07 03:00:30 +0900Updated at: 2020-01-07 03:00:30 +0900

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