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(111)，(001)，(110)高濃度ボロンドープダイヤモンド薄膜の超伝導絶縁体転移の臨界濃度
(Critical concentration of superconductor-insulator transition in (111),(001),(110)heavily boron-doped diamond)
日本物理学会2008年秋季大会. September 20, 2008-September 23, 2008.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:21:54 +0900 Updated at: 2017-07-10 20:19:16 +0900