酸素空孔が引き起こすp+poly-SiゲートHf系High-k MISFETにおける大きな閾値電圧シフト－理論的アプローチ
(Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-k MISFET with p+poly Si gates- A theoretical ap)
The joint Meeting of FIMS/ITS-NS/CTC/PLASMA-2004. 2004.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-01-08 03:23:38 +0900更新時刻: 2018-05-21 19:28:29 +0900