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酸素空孔が引き起こすp+poly-SiゲートHf系High-k MISFETにおける大きな閾値電圧シフト－理論的アプローチ
(Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-k MISFET with p+poly Si gates- A theoretical ap)
The joint Meeting of FIMS/ITS-NS/CTC/PLASMA-2004. November 24, 2004-November 28, 2004.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:23:38 +0900 Updated at: 2018-05-21 19:28:29 +0900