Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere
Hasselt Diamond Workshop 2017 - SBDD XXII. 2017.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2022-10-22 02:47:11 +0900更新時刻: 2022-10-22 02:47:11 +0900