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AuthorM. Oda, T. Irisawa, Y. Kamimuta, JEVASUWAN, Wipakorn, Tatsuro Maeda, O. Ichikawa, T. Ishihara, T. Osada, T. Tezuka.
TitleHfO2 成膜前アニールにより形成した GaOx パッシベーション層形成による Sub-1.0 nm EOT HfO2/In0.53Ga0.47As nMISFET の電子移動度向上
(Electron mobility improvement due to GaO x passivation layer formed by pre-deposition anneal in HfO2 /In0.53Ga0.47As nMISFET with sub-1.0 nm EOT)
Event nameThe 61st JSAP Spring Meeting 2014
Year of publication2014
LanguageJapanese
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