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(A graphene bilayer channel transistor with a very high Ion/Ioff ratio, graphene single electron devices and graphene mechanical structures for NEMS)
UK-Japan graphene workshop. February 03, 2011-February 04, 2011.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:35:48 +0900 Updated at: 2017-07-10 21:01:40 +0900