Crystallization Mechanism Driven by the Topmost ZrO2 Layer in HfxZr1-xO2 Films based on Stacking-Structure-Dependent Crystallization Kinetics

髙久理名, ONAYA, Takashi, 田村敦史, 喜多浩之.

10th International Symposium on Control of Semiconductor Interfaces (ISCSI-X), the International Conference on Silicon Epitaxy and International SiGe Technology and Device Meeting (ICSI/ISTDM 2025). 2025年11月10日-2025年11月13日.