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放射光を用いた100-1100 eV領域におけるSiおよびSiO2の光電子ピーク強度比の運動エネルギー依存性．II.計算
(Energy dependence of the Si2p photoelectron peak ratios of Si and SiO2 in the 100 - 1100 eV energy range measured with synchrotr)
表面科学講演大会. November 27, 2001-November 29, 2001.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:56:36 +0900 Updated at: 2017-07-10 18:20:01 +0900