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液滴エピタキシィ法で作製したGaAs量子ドットのアニール効果
(Post-Anneal Effects on Photoluminescence Properties of GaAs Quantum Dots Grown by Droplet Epitaxy)
Materials Research Society 2000 Fall Meeting. November 27, 2000-December 01, 2000.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:14:34 +0900 Updated at: 2018-05-30 18:40:34 +0900