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High-k/p+polySiゲートのフェルミレベルピニングの物理的起源
(Physcal meaning of the Fermi level pinning at High-k/p+poly-Si gate interafce)
応用物理学会シリコンテクノロジー分科会研究集会. 2004-07-23.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:37:36 +0900 Updated at: 2017-07-10 19:03:54 +0900