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n型ダイヤモンド／窒化物半導体へテロ接合における電子濃度分布の解析
(Analysis of electron distribution at heterojunction between n-diamond and nitride semiconductors)
2004年秋季第65回応用物理学会学術講演会. 2004.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:49:10 +0900Updated at: 2017-07-10 19:01:43 +0900