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Anodic porous alumina for resistive random access memory
(抵抗変化型不揮発性メモリとしての陽極酸化ポーラスアルミナ)
23rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors. August 23, 2009-August 28, 2009.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:30:41 +0900 Updated at: 2017-07-10 20:34:35 +0900