Evolution from isoelectronic impurities to an impurity band in N delta-doped AlAs grown by molecular beam epitaxy
The 17th International Conference on Molecular Beam Epitaxy. 2012.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 11:30:44 +0900更新時刻: 2017-07-10 21:24:24 +0900