HOME > Presentation > Detail
(Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing)
Surface and bulk defects in CVD diamond films, X. February 23, 2005-February 25, 2005.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:04:07 +0900 Updated at: 2018-05-30 19:28:23 +0900