HOME > Presentation > Detailβ-(AlxGa1-x)2O3のNi電極に対するショットキー障壁(Schottky barrier height of Ni to β-(AlxGa1-x)2O3 with different Al2O3 mole fractions)Elaheh Ahmadi, 大島 祐一, Dane Short, James S. Speck. 58th Electronic Materials Conference. 2016.NIMS author(s)OSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:03:24 +0900Updated at: 2017-07-10 22:27:32 +0900