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低温STMを用いた4.2 KにおけるSi(100)表面最安定構造の考察
(Surface Structure of Si(100) at 4.2 K by Low Temperature Scanning Tunneling Microscopy)
第50回応用物理学関係連合講演会. March 27, 2003-March 30, 2003.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 03:09:14 +0900 Updated at: 2017-07-10 18:39:43 +0900