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Si Surface Passivation by using Triode-Type Plasma-Enhanced CVD with Thermally-Energized Film-Precursors
(ガス加熱トライオードプラズマCVD法によるSi表面パシベーション)
28th Inter. Conf. on Amorphous and Nanocrystalline Semiconductors. August 04, 2019-August 09, 2019.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2019-09-11 03:00:21 +0900Updated at: 2019-09-11 03:00:21 +0900