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プロトン欠陥によりホールドープされるTTF導体:可動ドーパントの効果
(Hole Doping by Protonic Defects in Tetrathiafulvalene (TTF) Conductors: Effect of Mobile Dopant)

ICEAN-2012. 2012. Invited

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-02-14 11:14:11 +0900Updated at: 2024-03-05 11:44:04 +0900

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