HOME > Presentation > Detail(Schottky properties enhanced by using compensated Mg doped InGaN thin films material at interface metal-InGaN)ロザック ミカエル, 中野由崇, サン リウエン, 迫田 和彰, 角谷 正友. ISPlasma2012. 2012.NIMS author(s)SANG, LiwenSAKODA, KazuakiSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:30:58 +0900Updated at: 2017-07-10 21:33:19 +0900