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InGaAs上へのAlOのALD成長による良好なMIS界面特性の実現
(Quality MIS interfaces formed by ALD growth of Al2O3 on InGaAs)
2008年秋季 第69回応用物理学会学術講演会. September 02, 2008-September 05, 2008.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:06:20 +0900 Updated at: 2017-07-10 20:23:12 +0900