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同一基板上にホモエピタキシャル成長した高出力MWPCVDダイヤモンド薄膜のボロンドーピング濃度依存性
(Boron concentration dependence of p-type diamond films homoepitaxially grown on identical substrate using high-power MWPCVD meth)
第19回ダイヤモンドシンポジウム. 2005.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:17:20 +0900Updated at: 2017-07-10 19:30:34 +0900