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Impact of Additional Factor in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structure and Grain Size in the Metal Gates

大毛利 健治, T. Matsuki, D. Ishikawa, T. Morooka, T. Aminaka, Y. Sugita, 知京 豊裕, 白石 賢二, Y. Nara, 山田 啓作.
2008 IEEE International Electron Devices Meeting. 2008.

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    作成時刻: 2017-02-14 10:55:49 +0900更新時刻: 2017-07-10 20:23:41 +0900

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