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Impact of Additional Factor in Threshold Voltage Variability of Metal/High-k Gate Stacks and Its Reduction by Controlling Crystalline Structure and Grain Size in the Metal Gates

大毛利 健治, T. Matsuki, D. Ishikawa, T. Morooka, T. Aminaka, Y. Sugita, 知京 豊裕, 白石 賢二, Y. Nara, 山田 啓作.
2008 IEEE International Electron Devices Meeting. December 15, 2008-December 17, 2008.

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    Created at: 2017-02-14 10:55:49 +0900 Updated at: 2017-07-10 20:23:41 +0900

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