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ゲート可変な半導体2層グラフェンp-i-n接合におけるトンネル効果
(Tunnel effect through gate-controlled p-i-n junction in semiconducting bilayer graphene)

MANA International Symposium 2011. March 02, 2011-March 04, 2011.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-01-08 05:49:47 +0900Updated at: 2017-07-10 20:58:56 +0900

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