HOME > Presentation > Detailゲート可変な半導体2層グラフェンp-i-n接合におけるトンネル効果(Tunnel effect through gate-controlled p-i-n junction in semiconducting bilayer graphene)宮崎 久生, 黎 松林, 日浦 英文, 塚越 一仁, 神田晶申. MANA International Symposium 2011. March 02, 2011-March 04, 2011.NIMS author(s)TSUKAGOSHI, KazuhitoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 05:49:47 +0900Updated at: 2017-07-10 20:58:56 +0900