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S終端処理を施したGaAlAs基板上でのGa液滴からのGaAsエピタキシャル微結晶の成長.
(Growth of GaAs Epitaxial Microcrystals on a S-terminated GaAlAs Substrate by Droplet Epitaxy.)
応用物理学会. March 29, 1993-April 02, 1993.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:52:36 +0900 Updated at: 2017-07-10 17:18:30 +0900