HOME > Presentation > Detail
de Hass-van Alphen effect in LaRhSi3 and CeRhSi3
(LaRhSi3とCeRhSi3のdHvA効果)
文部省科学研究補助金特定領域研究（Ｂ）「電子軌道の秩序化と揺らぎ. January 06, 2000-January 08, 2000.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 01:53:40 +0900 Updated at: 2017-07-10 18:02:10 +0900