HOME > Presentation > DetailResistive switching characteristics in memristors with Al2O3-TiO2 bilayers生田目 俊秀. XXVI International Materials Research Congress. 2017. InvitedNIMS author(s)NABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-04-18 22:55:40 +0900Updated at: 2024-03-05 11:46:47 +0900