HOME > Presentation > DetailGaAs(111)A上のInSbメタモルフィック成長:InAs界面層の挿入効果(Growth of metamorphic InSb on GaAs (111)A: Effect of thin InAs interlayers)間野 高明, 大竹 晃浩. 第71回応用物理学会春季学術講演会. March 22, 2024-March 25, 2024.NIMS author(s)MANO, TakaakiOHTAKE, AkihiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2024-03-28 09:53:39 +0900 Updated at: 2024-03-28 09:53:39 +0900