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Si基板上に直接成長させたGe膜のRBS測定
(RBS analysis of the Ge layer directly grown on Si substrate)

河野 健一郎, 朴成鳳, 石川靖彦, 和田一美, 岸本 直樹.
16th International Conference on Ion Beam Modification of Materi. August 31, 2008-September 05, 2008.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-02-14 11:05:02 +0900Updated at: 2017-07-10 20:14:40 +0900

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