HOME > Presentation > Detail(Formation of Isoelectronic Localized States with Well-defined Emission Energy in δ-doped GaAs:N)佐久間 芳樹, 池沢道男, 張遼, 梅原晋太郎, 舛本泰章, 迫田 和彰. EWMOVPE 2013. June 02, 2013-June 05, 2013.NIMS author(s)SAKUMA, YoshikiSAKODA, KazuakiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 03:42:54 +0900Updated at: 2017-07-10 21:36:13 +0900