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(111)B歪量子井戸FETにおけるピエゾ電界効果
(Piezoelectric effect in (111)B strained quantum well field effect transistors)

野田 武司, 榊 裕之.
第66回応用物理学術講演会. 2005.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-01-08 04:02:41 +0900Updated at: 2017-07-10 19:25:03 +0900

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