HOME > Presentation > Detail(111)B歪量子井戸FETにおけるピエゾ電界効果(Piezoelectric effect in (111)B strained quantum well field effect transistors)野田 武司, 榊 裕之. 第66回応用物理学術講演会. 2005.NIMS author(s)NODA, TakeshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:02:41 +0900Updated at: 2017-07-10 19:25:03 +0900