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Giant tunnel magnetoresistance under bias voltages in a magnetic tunnel junction with a tri-layered MgO/MgAl2O4/MgO barrier
(3層型MgO/MgAl2O4/MgOバリアを有する磁気トンネル接合のバイアス電圧下での高磁気抵抗効果)
第82回 応用物理学会秋季学術講演会. September 10, 2021-September 13, 2021.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2021-09-16 03:00:23 +0900 Updated at: 2021-09-16 03:00:23 +0900