HOME > Presentation > DetailHVPEによるα-Ga2O3の選択横方向成長(Epitaxial Lateral Overgrowth of α-Ga2O3 by Halide Vapor Phase Epitaxy)大島 祐一, 河原克明, 神野莉衣奈, 四戸孝, 人羅俊実, 嘉数誠, 藤田静雄. 60th Electronic Materials Conference (EMC). 2018.NIMS author(s)OSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-01-31 22:20:32 +0900Updated at: 2018-06-05 14:17:48 +0900