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As終端Si(001)表面上でのGaAsの選択成長
(A selective growth of GaAs on a As-terminated Si(001) surface)
春季題４５回 応用物理学関係連合講演会. March 28, 1998-March 31, 1998.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:34:37 +0900 Updated at: 2017-07-10 17:47:34 +0900