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アモルファス酸化アルミニウムの酸素空孔の電子特性を用いた抵抗変化型メモリ
(Resistive Random Access Memory by using Electronic Functions of Oxygen Vacancy of Amorphous Aluminum Oxide)
MANA International Symposium 2018. March 05, 2018-March 07, 2018.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-03-08 22:36:19 +0900Updated at: 2018-06-05 14:18:52 +0900