HOME > Presentation > Detail(Growth and deep level defect evaluation of InGaN films for the application of photovoltaic devices)角谷 正友, サン リウエン, ロザック ミカエル, 中野由崇. International Symposium of Growth of III-Nitrides(ISCN-4). 2012.NIMS author(s)SUMIYA, MasatomoSANG, LiwenFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-26 20:37:44 +0900Updated at: 2017-07-10 21:33:18 +0900