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GaNのナノ構造形成のためのサファイア基板のコンビナトリアル処理
(Interface control of sapphire substrate for approaching nano-fabrication of GaN film grown by MOCVD)
International Mini-workshop on Nano and Combinatorial Technologi. 2006. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:53:59 +0900Updated at: 2024-03-05 11:41:21 +0900