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Low-Temperature RF Switching Device Using the Metal–Insulator Transition of W-Doped VO₂ thin films
32nd International Workshop on Oxide Electronics (IWOE 32). September 27, 2026-September 30, 2026.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2026-10-20 03:06:59 +0900 Updated at: 2026-10-20 03:06:59 +0900