HOME > Presentation > Detail
Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond
Fifth International Symposium on Control of Semiconductor Interf. November 12, 2007-November 14, 2007.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2022-09-05 11:59:44 +0900 Updated at: 2022-09-05 11:59:44 +0900