HOME > Presentation > Detail
低温NO酸窒化により形成した極薄SiO2/SiC界面特性評価
(Characterization of Ultrathin SiO2/SiC Interfaces Fabricated by Low-temperature NO Oxynitridation)
第86回 応用物理学会 秋季学術講演会. September 07, 2025-September 10, 2025.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2025-09-30 03:14:27 +0900 Updated at: 2025-09-30 03:14:27 +0900