Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy
(CAICISS測定によるAlNの極性評価)
The 36th International Symposium on Compound Semiconductors. 2009.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2022-09-05 12:25:03 +0900更新時刻: 2022-09-05 12:25:03 +0900