HOME > Presentation > Detail
(Energetics of H in dislocations in Si)
Invited
International Conference of defects in Semiconductors (ICDS23). 2005. NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-25 00:58:52 +0900Updated at: 2024-03-05 11:40:42 +0900