HOME > Presentation > Detail
Mechanism of Vfb shift in HfO2 gate stack by Al diffusion from (TaC)1-xAlx gate electrode
((TaC)1-xAlx電極からのAl拡散によるHfO2ゲートスタックにおけるVfbシフトのメカニズム)
221st ECS Meeting. May 06, 2012-May 11, 2012. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2022-09-05 13:20:27 +0900 Updated at: 2024-03-05 11:43:44 +0900