HOME > その他の文献 > 書誌詳細In-situ TEM observation of silicide formation and dopant segregation in Ni fully silicided gatesTakuji Hosoi, Kentaro Shibahara, HASEGAWA, Akira, FURUYA, Kazuo. Extended Abstracts and Program of ISCSI-V 147-148. 2007.NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-09-05 12:02:41 +0900 更新時刻: 2022-09-05 12:02:41 +0900
