Partial Fluorescence Yield XANES Measurements for Ultra-Dilute Dopants by Silicon-Drift Detector
(部分蛍光収量法による超希薄ドーパントのX線吸収端近傍構造測定)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2020-11-20 10:40:37 +0900Updated at: 2020-11-20 10:40:37 +0900