HOME > Misc > DetailOxidation Rate and Surface Potential Variations of Silicon During the Plasma Oxidation(プラズマ酸化によるシリコンの酸化速度と表面電位変動)M. Kitajima, 上岡功, 中村一隆, S. Hishita, I. Kamioka, K. G. Nakamura. Physical Review B 53 [7] 3993-3999. 1996.https://doi.org/10.1103/physrevb.53.3993 NIMS author(s)HISHITA, ShunichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-11-20 10:36:07 +0900Updated at: 2024-04-02 00:06:09 +0900