Surface Stoichometry of S-terminated GaAs(001)(2×6)-S studied by Synchrotron Radiation Photoelectron Spectroscopy | SAMURAI, NIMS Researchers Directory Service

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Surface Stoichometry of S-terminated GaAs(001)(2×6)-S studied by Synchrotron Radiation Photoelectron Spectroscopy
(放射光光電子分光法による硫黄終端GaAs(001)(2×6)-S構造の解析)

SHIMODA, Masahiko, 塚本史郎, 渡辺義夫, 杉山宗弘, 前山智, OHNO, Takahisa, 小口信行.

Photon Factory Activity Report 1998(PF Activity Report 1998) . 1999.

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-09-05 10:56:26 +0900 Updated at: 2022-09-05 10:56:26 +0900

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